solid state devices, inc. sff70n04 series data sheet #: F00002b maximum ratings symbol units value i dm 140 pulsed drain current drain-source voltage v ds 40 amps volts w o c/w 70 amp / 40 volts 0.010 w w w w w n-channel power mosfet thermal resistance, junction to case r q q q q q jc total device dissipation @ t c = 25 o c p d i ar 60 avalanche current amps designer's data sheet note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. sff70n04 s.5 tx part number /ordering information 1/ screening 2/ : _ = not screened tx = tx level txv = txv level s = space level package: 3/ s.5 = smd.5 application notes: ? low rds (on) and high transconductance ? excellent high temperature stability ? fast switching speed ? intrinsic rectifier ? hermetically sealed package ? tx, txv, and space level screening available o c operating and storage temperature t j, t stg -55 to +175 107 1.1 i c 56 5/ 47 continuous collector current @ t c = 25 o c @ t c = 100 o c amps 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com smd.5 (s.5) gate-source voltage v gs e 20 volts e ar 180 repetitive avalanche energy mj
solid state devices, inc. v 40 - v (br)dss drain - source breakdown voltage (v gs = 0v, i d = 250 m a) na - e 100 gate - emitter leakage current (v ds = 0v, v gs = + 20v) m m m m m a - - 1 50 i dss zero gate voltage drain current (v ds = 40v, v gs = 0v) 70 - i d(on) on-state drain current * (v ds = 5v, v gs = 10v) s 20 - g fs min max electrical characteristics 4/ symbol units -pf output capacitance - c oss v dd = 15v, i d = 70a, v gen = 10v, r l = 0.2 w , r g = 2.5 w turn-on delay time t d(on) 30 nsec i gss - notes: * pulse test: pulse width = 300us, duty cycle = 2% 1/ for ordering information, price, and availability, contact factory. 2/ screening per mil-prf-19500. 3/ for package outlines contact factory. 4/ all electrical characteristics @25 o c, unless otherwise specified. 5/ current limited by package, die rated at 70a sff70n04 series reverse transfer capacitance - c rss turn-off delay time rise time t r 30 nsec t d(off) 100 nsec - - v 13 gate threshold voltage (v ds = v gs , i ds = 250 m a) v gs (th) 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com available part numbers: sff70n04s.5 a forward transconductance * (v ds = 15v, i d = 30a) -pf fall time t f 60 nsec - - - - - - 57 typ 600 14 160 12 58 - 30 t j = 25 o c t j = 125 o c reverse diode forward voltage drop (i f = 70a, v gs = 0v) - v f 1.5 v 1.0 reverse diode reverse recovery time (i f = 70a, di/dt = 100a/ m s) - t rr 100 nsec 50 - - - - 0.010 0.017 0.014 0.024 r ds(on) drain-source on-state resistance * v gs = 10v, i d = 30a v gs = 4.5v, i d = 20a w w w w w 0.008 0.014 0.011 0.019 t j = 25 o c t j = 125 o c t j = 25 o c t j = 125 o c -pf input capacitance - c iss 2700 v ds = 25v, v gs = 0v, f = 1mhz -nc gate - source charge - q gs gate - drain charge - q gd -nc 10 9 100 nc total gate charge - q g 50 v ds = 15v, v gs = 10v, i d = 70a pin assignment source gate drain package pin 3 pin 2 pin1 smd.5
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